Samsung 980 MZ-V8V250BW - SSD - encrypted - 250 GB - internal - M.2 2280 - PCIe 3.0 x4 (NVMe) - 256-bit AES - TCG Opal Encryption

Κωδικός MZ-V8V250BW
Μάρκα Samsung
Εγγύηση 12 Μήνες
Μόνο χάριν παραδείγματος.
Απόθεμα Ποσ Εκτιμώμενη παράδοση Τιμή
ΦΠΑ
DK773 18 22/4/2026 ~ 4 εβδομάδες 228,48
ELKRO 0 ~ 4 εβδομάδες 72,26
ELKRO 0 ~ 4 εβδομάδες 179,11
DK773  19 ~ 4 εβδομάδες 228,48
Product Description
Samsung 980 MZ-V8V250BW - SSD - 250 GB - PCIe 3.0 x4 (NVMe)
Type
Solid state drive - internal
Capacity
250 GB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
Form Factor
M.2 2280
Interface
PCIe 3.0 x4 (NVMe)
Features
NVM Express (NVMe) 1.4, Samsung V-NAND 3bit MLC Technology, Host Memory Buffer (HMB), Samsung Pablo Controller, TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Intelligent TurboWrite Technology, state-of-the-art thermal control, S.M.A.R.T.
Dimensions (WxDxH)
22.15 mm x 80.15 mm x 2.38 mm
Weight
8 g
Manufacturer Warranty
5-year warranty
Device Type
Solid state drive - internal
Capacity
250 GB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
Form Factor
M.2 2280
Interface
PCIe 3.0 x4 (NVMe)
Features
NVM Express (NVMe) 1.4, Samsung V-NAND 3bit MLC Technology, Host Memory Buffer (HMB), Samsung Pablo Controller, TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Intelligent TurboWrite Technology, state-of-the-art thermal control, S.M.A.R.T.
Width
22.15 mm
Depth
80.15 mm
Height
2.38 mm
Weight
8 g
SSD Endurance
150 TB
Internal Data Rate
2900 MBps (read) / 1300 MBps (write)
4KB Random Read
17000 IOPS
4KB Random Write
53000 IOPS
Maximum 4KB Random Write
320000 IOPS
Maximum 4KB Random Read
230000 IOPS
MTBF
1,500,000 hours
Interfaces
PCI Express 3.0 x4 (NVMe) - M.2 Card
Compatible Bay
M.2 2280
Power Consumption
3.7 Watt (average) ¦ 5.6 Watt (maximum) ¦ 0.045 Watt (idle)
Software Included
Samsung Magician Software
Compliant Standards
IEEE 1667
Service & Support
Limited warranty - 5 years
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Shock Tolerance (operating)
1500 g @ 0.5 ms half-sine