Device Type

Solid state drive - internal

Capacity

4 TB

Hardware Encryption

Yes

Encryption Algorithm

256-bit AES

NAND Flash Memory Type

Triple-level cell (TLC)

Form Factor

M.2 2280

Interface

PCIe 5.0 x2 (NVMe)

Features

Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667

Width

22.15 mm

Depth

80.15 mm

Height

2.38 mm

Weight

9 g

Internal Data Rate

7250 MBps (read) / 6300 MBps (write)

Maximum 4KB Random Write

1400000 IOPS

Maximum 4KB Random Read

1050000 IOPS

MTBF

1.500.000 hours

Compatible Bay

M.2 2280

Power Consumption

5.5 watt (read) ¦ 4.8 watt (write) ¦ 60 mW (standby) ¦ 5 mW (sleep)

Software Included

Samsung Magician Software

Enclosure Material

Nickel coating

Shipping Width

9.9 cm

Shipping Depth

2.29 cm

Shipping Height

14.2 cm

Service & Support

Limited warranty - 5 years / 2400 TBW

Min Operating Temperature

0 °C

Max Operating Temperature

70 °C

Min Storage Temperature

-40 °C

Max Storage Temperature

85 °C

Humidity Range Operating

5 - 95% (non-condensing)

Shock Tolerance (non-operating)

1500 g @ 0.5 ms

Vibration Tolerance (non-operating)

20 g @ 20-2000 Hz

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